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An improved method for manufacturing a lateral germanium detector is disclosed. A detector window is opened through an oxide layer to expose a doped single crystalline silicon layer situated on a substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. Large area position-sensitive planar germanium wafers are increasingly being used for a variety of gamma-ray imaging and tracking tasks. Position sensitivity can be achieved through measuring charge collected on orthogonal strip electrodes, and by digital pulse shape analysis. Giant pop-ins and amorphization in germanium during indentation David J. Oliver,a Jodie E. Bradby, and Jim S. Williams Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT , Australia Michael V. Swain.
University of North Carolina at Chapel Hill. Aug - Dec